transistor(pnp) features compliment to pxt8050 marking: y2 maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current -continuous -1.5 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = -100 a, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c = -0.1ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb = -40 v,i e =0 -0.1 a collector cut-off current i ceo v ce = -20v, i b =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a h fe(1) v ce = -1v, i c = -100ma 85 400 dc current gain h fe(2) v ce = -1v, i c = -800ma 40 collector-emitter saturation voltage v ce(sat) i c =-800ma, i b = -80ma -0.5 v base-emitter saturation voltage v be(sat) i c =-800ma, i b = -80ma -1.2 v base-emitter on voltage v be(on) ic=-1v,v ce =-10ma -1 v base-emitter positive favor voltage v bef i b =-1a -1.55 v transition frequency f t v ce = -10v, i c = -50ma 100 mhz output capacitance c ob v cb =-10v,i e =0,f=1mhz 20 pf classification of h fe(1) rank b c d d3 range 85-160 120-200 160-300 300-400 sot-89 1. base 2. collector 3. emitter 1 2 3 pxt8 550 1 date:2011/05 www.htsemi.com semiconductor jinyu
pxt8 550 2 date:2011/05 www.htsemi.com semiconductor jinyu
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